MOSFETs Silicon P-Channel MOS (U-MOS )
1. Applications
0 Lithium-Ion Secondary Batt歌來eries
0 Power Management Switches
2. Features
(1) Small footprint due to small and thi答快n package
(2) Low drain-source on-對你resistance: RDS(ON) = 39 mΩ (typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 μA (max) (VDS = -40 V)
(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
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